BSP92P
SIPMOS Small-Signal-Transistor
Feature
Product Summary
• P-Channel
VDS
• Enhancement mode
RDS(on)
• Logic Level
ID
• dv/dt rated
-250
V
12
Ω
-0.26
A
PG-SOT223
Drain
pin 2/4
• Qualified according to AEC Q101
• Halogenfree according to IEC61249221
4
Gate
pin1
3
Source
pin 3
2
1
VPS05163
Type
Package
Pb-free
Tape and Reel Information
Marking
BSP92P
PG-SOT223
Yes
H6327: 1000 pcs/reel
BSP92P
Packaging
Non dry
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA=25°C
-0.26
TA=70°C
-0.23
ID puls
-1.04
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
1.8
W
-55... +150
°C
Pulsed drain current
TA=25°C
Reverse diode dv/dt
kV/µs
IS =-0.26A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C
TA=25°C
Tj , Tstg
Operating and storage temperature
55/150/56
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Rev 2.7
Class 1a
Page 1
2012-11-26
BSP92P
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
15
25
-
80
115
-
48
70
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 4)
SMD version, device on PCB:
RthJA
@ min. footprint
@ 6 cm 2 cooling area
1)
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
-250
-
-
-1
-1.5
-2
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS
V
VGS =0, ID=-250µA
Gate threshold voltage, VGS = VDS
VGS(th)
ID =-130µA
Zero gate voltage drain current
µA
IDSS
VDS =-250V, VGS =0, Tj =25°C
-
-0.1
-0.2
VDS =-250V, VGS =0, Tj =150°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
10
20
Ω
RDS(on)
-
8.2
15
RDS(on)
-
7.5
12
Gate-source leakage current
VGS =-20V, VDS =0
Drain-source on-state resistance
VGS =-2.8V, ID =-0.025A
Drain-source on-state resistance
VGS =-4.5V, ID =-0.23A
Drain-source on-state resistance
VGS =-10V, ID =-0.26A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.7
Page 2
2012-11-26
BSP92P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
0.29
0.57
-
S
pF
Dynamic Characteristics
Transconductance
gfs
|VDS|≥2*|ID |*RDS(on)max ,
ID =-0.23A
Input capacitance
Ciss
VGS =0, VDS =-25V,
-
83
104
Output capacitance
Coss
f=1MHz
-
13
16
Reverse transfer capacitance
Crss
-
6
8
Turn-on delay time
td(on)
VDD =-125V, VGS =-10V,
-
5
8
Rise time
tr
ID =-0.26A, RG=6Ω
-
6
9
Turn-off delay time
td(off)
-
67
101
Fall time
tf
-
33
50
-
-0.1
-
-1.9
-2.4
-
-4.3
-5.4
V(plateau) VDD =-200V, ID=-0.26A
-
-2.9
-3.6
IS
-
-
-0.26 A
-
-
-1.04
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =-200V, ID=-0.26A
VDD =-200V, ID=-0.26A,
-0.13 nC
VGS =0 to -10V
Gate plateau voltage
V
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inv. diode direct current, pulsed ISM
Inverse diode forward voltage
VSD
VGS =0, IF=-0.26A
-
-0.83
Reverse recovery time
trr
VR =-125V, IF =lS ,
-
51
64
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
76
95
nC
Rev 2.7
Page 3
-1.21 V
2012-11-26
BSP92P
1 Power dissipation
2 Drain current
Ptot = f (TA )
ID = f (TA )
parameter: |VGS | ≥ 10V
1.9
BSP 92 P
BSP 92 P
-0.28
A
W
-0.24
1.6
-0.22
-0.2
1.2
ID
Ptot
1.4
-0.18
-0.16
1
-0.14
-0.12
0.8
-0.1
0.6
-0.08
-0.06
0.4
-0.04
0.2
-0.02
0
0
20
40
60
80
100
°C
120
0
0
160
20
40
60
80
100
120
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJA = f (tp )
parameter : D = 0 , TA = 25°C
parameter : D = tp /T
-10
160
°C
TA
1 BSP 92 P
10 2
A
BSP 92 P
K/W
tp = 110.0µs
10 1
Z thJA
ID
-10 0
/I
D
1 ms
DS
10 ms
10 0
=
V
-10 -1
on
)
D = 0.50
R
DS
(
0.20
0.10
single pulse
-10 -2
0.05
10 -1
0.02
DC
0.01
-10 -3 -1
-10
-10
0
-10
1
-10
2
V
-10
3
VDS
Rev 2.7
10 -2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
tp
Page 4
2012-11-26
4
BSP92P
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS )
RDS(on) = f (ID )
parameter: Tj =25°C, -VGS
parameter: VGS ; Tj =25°C, -VGS
1
0.8
-I D
0.7
0.6
0.5
Ω
10V
6V
5V
4.6V
4.2V
3.6V
3.4V
3.2V
2.8V
2.6V
2.6V 2.8V
3.2V
14
RDSON
A
18
12
10
8
0.4
10V
6V
5V
4.6V
4.2V
3.6V
3.4V
6
0.3
4
0.2
2
0.1
0
0
1
2
3
4
5
6
7
8
V
0
0
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max
gfs = f(ID)
parameter: Tj = 25 °C
parameter: Tj =25°C
1
g fs
-I D
S
0.6
0.6
0.4
0.4
0.2
0.2
1
2
V
0
0
4
-VGS
Rev 2.7
1
1
A
0
0
A
-ID
0.2
0.4
0.6
A
1
-ID
Page 5
2012-11-26
BSP92P
9 Drain-source on-state resistance
10 Gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = -0.26 A, VGS = -10 V
parameter: VGS = VDS ; ID = -130µA
32
BSP 92 P
2.2
Ω
V
- VGS(th)
RDS(on)
98%
24
20
1.8
1.6
typ.
1.4
16
1.2
98%
12
1
8
typ
0.8
4
0
-60
2%
0.6
-20
20
60
100
°C
0.4
-60
180
-20
20
60
100
°C
160
Tj
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS =0, f=1 MHz, Tj = 25 °C
parameter: Tj
10
3
-10 1
pF
BSP 92 P
A
Ciss
-10 0
C
IF
10 2
Coss
10 1
-10 -1
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Crss
Tj = 150 °C (98%)
10 0
0
6
12
18
24
V
-10 -2
0
36
-VDS
Rev 2.7
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
Page 6
2012-11-26
BSP92P
13 Typ. gate charge
14 Drain-source breakdown voltage
VGS = f (QGate )
V(BR)DSS = f (Tj )
parameter: ID = -0.26 A pulsed
-16
BSP 92 P
BSP 92 P
-300
V
V(BR)DSS
V
VGS
-12
-10
-285
-280
-275
-270
-265
-8 20%
-260
50%
-255
-6 80%
-250
-245
-4
-240
-235
-2
-230
0
0
1
2
3
4
5
nC
-225
-60
6.5
|Q G|
Rev 2.7
-20
20
60
100
°C
180
Tj
Page 7
2012-11-26
BSP92P
Rev 2.7
Page 8
2012-11-26
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